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| Up to 6 GHz Low Noise Silicon Bipolar Transistor Technical Data AT-41410 Features * Low Noise Figure: 1.6 dB Typical at 2.0 GHz 3.0 dB Typical at 4.0 GHz * High Associated Gain: 14.0 dB Typical at 2.0 GHz 10.0 dB Typical at 4.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Hermetic, Gold-ceramic Microstrip Package interdigitated geometry yields an intermediate sized transistor with impedances that are easy to match for low noise and moderate power applications. This device is designed for use in low noise, wideband amplifier, mixer and oscillator applications in the VHF, UHF, and microwave frequencies. An optimum noise match near 50 at 1 GHz , makes this device easy to use as a low noise amplifier. The AT-41410 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 100 mil Package Description Hewlett-Packard's AT-41410 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-41410 is housed in a hermetic, high reliability 100 mil ceramic package. The 4 micron emitter-toemitter pitch enables this transistor to be used in many different functions. The 14 emitter finger 5965-8923E 4-104 AT-41410 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 60 500 200 -65 to 200 Thermal Resistance [2,4]: jc = 170C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 5.9 mW/C for TC > 115C. 4. The small spot size of this technique results in a higher, though more accurate determination of jc than do alternate methods. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 P1 dB G1 dB NFO Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 25 mA Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 25 mA 1 dB Compressed Gain; VCE = 8 V, IC = 25 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB dBm dB dB Min. Typ. Max. 12.0 6.5 19.0 18.5 14.0 9.5 1.3 1.6 3.0 18.5 14.0 10.0 8.0 30 150 270 0.2 1.0 1.9 GA Gain @ NFO; VCE = 8 V, IC = 10 mA dB 13.0 GHz -- A A pF fT hFE ICBO IEBO CCB Gain Bandwidth Product: VCE = 8 V, IC = 25 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 10 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz 0.2 Notes: 1. For this test, the emitter is grounded. 4-105 AT-41410 Typical Performance, TA = 25C 24 21 18 GAIN (dB) 15 12 9 6 NF50 GA 24 P1 dB (dBm) 16 15 10 V 6V GA 4V 20 P1dB 2.0 GHz 4.0 GHz 2.0 GHz 14 GAIN (dB) 13 12 16 8 6 G1 dB (dB) NF (dB) 4 NFO 12 G1dB 4.0 GHz 4 4V 6V 10 V NFO 3 2 1 8 3 0 0.5 1.0 2.0 2 0 3.0 4.0 5.0 4 0 10 20 30 40 0 10 20 30 40 FREQUENCY (GHz) IC (mA) IC (mA) Figure 1. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Optimum Noise Figure and Associated Gain vs. Collector Current and Collector Voltage. f = 2.0 GHz. 16 14 12 GAIN (dB) GAIN (dB) 10 8 4.0 GHz NFO 2.0 GHz GA 4.0 GHz 2.0 GHz 40 35 30 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) |S21E|2 MAG 20 1.0 GHz 16 |S21E|2 GAIN (dB) MSG 11 2.0 GHz 6 NFO (dB) 4 2 0 8 4.0 GHz 4 0 10 20 30 40 0 0 10 20 30 40 IC (mA) IC (mA) Figure 4. Optimum Noise Figure and Associated Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 5. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 25 mA. Figure 6. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. 4-106 NFO (dB) AT-41410 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .61 -40 27.7 24.38 159 0.5 .60 -127 22.2 12.83 110 1.0 .60 -163 17.1 7.12 86 1.5 .60 179 13.8 4.89 71 2.0 .61 165 11.4 3.72 59 2.5 .61 157 9.7 3.04 52 3.0 .62 149 8.2 2.56 42 3.5 .63 140 7.0 2.23 31 4.0 .62 130 5.9 1.96 20 4.5 .61 120 4.9 1.76 10 5.0 .61 106 4.0 1.59 -1 5.5 .62 94 3.2 1.45 -11 6.0 .66 82 2.4 1.31 -22 dB -40.0 -30.4 -28.2 -27.5 -26.0 -24.7 -23.9 -22.3 -21.3 -20.4 -18.9 -18.3 -17.5 S12 Mag. .010 .030 .039 .042 .050 .058 .064 .077 .086 .095 .113 .121 .133 S22 Ang. 75 40 35 45 42 46 50 48 44 41 38 33 30 Mag. .94 .62 .50 .46 .45 .44 .44 .46 .48 .50 .52 .52 .51 Ang. -13 -33 -38 -42 -48 -52 -58 -68 -78 -85 -91 -97 -105 AT-41410 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 25 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .45 -69 31.4 37.17 150 0.5 .58 -153 23.3 14.63 101 1.0 .59 -178 17.7 7.68 81 1.5 .60 169 14.3 5.21 68 2.0 .60 157 11.9 3.94 56 2.5 .61 151 10.1 3.20 50 3.0 .62 144 8.6 2.70 40 3.5 .63 135 7.4 2.35 30 4.0 .62 126 6.3 2.07 19 4.5 .61 116 5.3 1.85 9 5.0 .61 103 4.5 1.67 -2 5.5 .63 91 3.6 1.52 -12 6.0 .67 80 2.8 1.37 -22 A model for this device is available in the DEVICE MODELS section. dB -39.2 -33.6 -30.4 -28.2 -25.8 -24.4 -23.1 -21.9 -20.5 -19.3 -18.5 -17.6 -16.8 S12 Mag. .011 .021 .030 .039 .051 .060 .070 .080 .094 .108 .119 .131 .144 S22 Ang. 64 43 53 58 55 55 58 54 53 45 41 34 29 Mag. .87 .49 .43 .41 .41 .40 .40 .42 .44 .46 .49 .49 .47 Ang. -18 -33 -35 -40 -45 -49 -56 -66 -76 -84 -90 -96 -104 AT-41410 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.2 1.2 1.3 1.6 3.0 opt Mag .12 .10 .06 .26 .46 Ang 4 23 49 172 -133 RN/50 0.17 0.17 0.16 0.16 0.26 4-107 100 mil Package Dimensions .040 1.02 4 EMITTER .020 .508 BASE 1 COLLECTOR 3 2 EMITTER Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .004 .002 .10 .05 .100 2.54 .495 .030 12.57 .76 .030 .76 4-108 |
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